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CJP06N60 - Power filed Effect Transistor

CJP06N60_1226337.PDF Datasheet


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CJP06N60 Power filed Effect Transistor
Jiangsu Changjiang Electronics Technology Co., Ltd
JIANGSU[Jiangsu Changjiang Electronics]
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MOTOROLA[Motorola, Inc]
IRF530_D ON0283 IRF530-D IRF530/D 100V4A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管(N沟道增强型硅门))
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
Motorola, Inc.
ON Semiconductor
IRFF110 IRFF111 IRFF112 IRFF113 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
General Electric Solid State
GE Solid State
PTF080601F PTF080601E PTF080601A PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
INFINEON[Infineon Technologies AG]
PTF10020 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
ERICSSON POWER MODULES AB
Ericsson Microelectronics
MRF21180R6 MRF21180 2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFET
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Freescale (Motorola)
MOTOROLA[Motorola Inc]
Motorola, Inc
MRF9210 MRF9210R3 MRF9210 880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFET
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MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
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ON Semiconductor
CMT14N50 CMT14N50N3P POWER FIELD EFFECT TRANSISTOR
Champion Microelectronic Corp.
 
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